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         Datasheet www.rohm.com ? 2013 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB501V-40 lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) Low current rectification lFeatures 1) Ultra Small mold type. (UMD2) 2) Low IR lStructure 3) High reliability. lConstruction Silicon epitaxial planar lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta= 25°C) Reverse voltage (repetitive peak) VRM V Reverse voltage (DC) VR V Average rectified forward current Io mA Forward current surge peak (60Hz?1cyc) IFSM A Junction temperature Tj °C Storage temperature Tstg °C Symbol Min. Typ. Max. Unit VF1 - - 0.55 V IF=100mA VF2 - - 0.34 V IF=10mA Reverse current IR - - 30 mA VR=10V Capacitance between terminals Ct - 6.0 - pF VR=10V , f=1MHz Forward voltage Parameter Conditions Parameter -40 to +125 lElectrical characteristics (Ta = 25°C) Symbol Limits Unit 45 40 100 1 125 Anode Cathode ROHM : UMD2 JEITA : SC-90/A dot (year week factory) JEDEC :SOD-323 UMD2 0.3±0.05 0.7±0.2 0.1 0.1±0.1 0.05 1.7±0.1 2.5±0.2 1.25±0.1 2.1 0.8MIN. 0.9MIN. 4.0±0.1 2.0±0.05 φf1.551.55±0.05?0.05 1.40±0.1 4.0±0.1 φf1.051.05 2.75 3.5±0.05 1.75±0.1 8.0±0.2 0.3±0.1 1.0±0.1 2.8±0.1 1/5 2013.04 - Rev.C |